| 摘要 |
<p>PURPOSE:To prevent a gate electrode bus from deterioration in characteristics of thin film transistor due to static electricity by a method wherein, after isolation-forming respective thin film transistors by forming row and column electrodes, semiconductor layer and insulating layer lamination-formed are irradiated with ultraviolet ray from the insulating layer side. CONSTITUTION:A gate electrode 6, an insulating layer 7 and a semiconductor layer 8 are formed on a translucent substrate 5 and then a transparent electrode layer 11 is formed to be patterned into a picture element electrode. Finally, a source electrode 9 and a drain electrode 10 are successively formed by sputtering process to form a thin film transistor. On the other substrate 1, a color filter 2, a common electrode 3 are provided while opposing layers 2, 12 are laminated on said two substrates to be opposition-processed so that a gap may be made through the intermediary of a spacer to inject a liquid crystal 13 thereinto forming it into a panel. Finally, the gap is irradiated with ultraviolet rays 16 through the substrate 5 to complete a final liquid crystal panel.</p> |
