| 摘要 |
PURPOSE:To execute a stable program even when a memory capacity is increased by dividing a nonvolatile memory into some blocks, providing a driver at respective blocks and executing successively the program at every block. CONSTITUTION:All nonvolatile memory cells are suitably divided, the source of the P channel transistor of an inverter constituting the SRAM of the nonvolatile memory cell 1 of one divided block is connected to the output terminal of a driver 2, and one memory block is constituted. Plural memory blocks are collected and constitute the memory array of the whole of an integrated circuit. The driver 2 provided at respective memory blocks is controlled by a program timing control circuit 3, a high voltage impressed from a program signal generating circuit 5 to generate the high pressure necessary to the program of an EEPROM to each EEPROM is supplied through a high voltage switch 6, and the high voltage switch 6 is also controlled by the programming timing control circuit 3.
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