| 摘要 |
PURPOSE:To imspect the logical state of the title semiconductor device by a method wherein the part in the vicinity of the junction of the source and the drain of a MOS transistor, or the part in the vicinity of the junction of the collector and the base of a bipolar transistor is prevented from being covered with a wiring layer, each junction is irradiated with a laser beam to examine logical conditions. CONSTITUTION:An MOS transistor is formed on a semiconductor substrate 1, an aperture part 3 is formed on an insulating film 2, and then a wiring layer 4 is formed. At this time, a wiring structure wherein a part is cut off is formed so that the region is the vicinity of each junction is not completely covered by the wiring layer 4 and also there is no effect inflicting on electric characteristics. Subsequently, a protective film 5 is coated, and the title semiconductor device is completed. As a result, the logical condition in a logical circuit can be checked easily even when a laser beam is used to check the logical condition, because a part of the wiring layer in the vicinity of each junction is cut off.
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