| 摘要 |
PURPOSE:To obtain a semiconductor laser element having high reliability even at high output operation by a method wherein width of a current constriction part formed according to impurity diffusion is broadened partially at a region in the neighborhood of a reflecting surface. CONSTITUTION:By broadening width of a stripe type current constriction part 7 to be formed according to impurity diffusion in the neighborhood of a reflecting surface 10, a region having high density of crystal defect existing in the side part of the stripe is kept away from an oscillation region. As a result, comparatively rapid deterioration generated to the usual element can be checked. Moreover the current constriction part 7 is formed having width corresponding to the oscillation region in the region of the greater part in the resonator excluding the neighborhood of the reflecting surface 10, and the increase on the threshold current value, the reduction of efficiency and the reduction of stability of the fundamental transverse mode oscillation to be caused according to broadening in the neighborhood of the reflecting surface 10 of width of the current constriction part 7 are little.
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