| 摘要 |
PURPOSE:To simply the process of base region formation by a method wherein an insulating film on a base forming region is built thicker than an insulating film on a side base forming region and ions arc implanted for the simultaneous formation of a p-diffused layer and a shallow but rich p<+>-diffused region. CONSTITUTION:Two types of insulating films 11 and 12 are formed on a region for a base. photoetching is accomplished whereto the insulating film 11 on a side base forming region is subjected first and then the insulating film 12. A process follows wherein ions are implanted into the etched regions and then thermal diffusion is accomplished for the formation of a deep, low-concentration p-diffused region 9. The insulating film 11 positioned on a region for a base is subjected to another photoetching, ion implantation is accomplished for the formation of a p-diffusion source, and then thermal diffusion is accomplished for the simultaneous formation of a low-concentration p-diffused layer 3 to serve as a base and a high-concentration p<+>-diffused layer 5 to serve as a side base.
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