| 摘要 |
PURPOSE:To prevent deterioration in characteristics due to heat treatment of a contact part, by providing a metal silicide film, in which metal material, whose oxide yielding energy is negatively larger than the material of a semiconductor substrate, is included, between the substrate and a conductive interconnection. CONSTITUTION:An insulating film 13, in which a hole is selectively provided, is formed on an Si substrate 12, in which a high concentration impurity diffused layer 11 is formed. The hole part 15 is selectively covered. A metal material, whose oxide yielding energy is negatively larger than Si, is included in a metal silicide film 14. The metal silicide14, e.g, tungsten silicide or molybdenum silicide is formed. A conductor interconnection 16 comprising tungsten, molybdenum or the like is formed on the film 14. Even if heat treatment is carried out at a temperature of 500 deg.C or more, oxygen is not concentrated at a contact interface, and the electric characteristics of the contact part are not deteriorated.
|
