| 摘要 |
PURPOSE:To suppress erroneous operations due to alpha rays to a minimum by wrapping a charging and discharging region for storing electric charge in the inside of each capacitor insulating film, and forming a Tr, which is connected to each capacitor, on an SOI. CONSTITUTION:Capactior insulating films are provided so as to wrap regions 3, in which electric charge is stored. Many films are arranged in embedded forms in a substrate 1. Partioning walls 4 made of single crystal semiconductor, which is continued from the substrate, is formed in a lattice shape between capacitors. An opening part 5 of each capacitor insulating film is provided in the vicinity of the center of the upper surface of each capacitor part. A switching Tr for inputting and taking out the electric charge is provided in a region 10 shown by a dotted line in the Figure at the upper part of the opening part. In order to provide the region for forming the Tr, a single crystal region 7, which is extended on the capacitor from each single crystal partitioning wall 4, is provided. Thus, the charging and discharging region for storing the electric charge is wrapped in the inside of each capacitor insulating film, and erroneous operations due to alpha rays can be suppressed to a minimum. |
