| 摘要 |
PURPOSE:To prevent the metal contamination on a substrate to be treated by providing an electromagnetic shield held at a floating potential, cover held at an earth potential, and one set of high-frequency electrodes disposed to the inside of the electromagnetic shield. CONSTITUTION:The anode electrode 7 is raised to an up position 8 and after the substrate 12 is conveyed above the cathode electrode 6 from a gate valve of a vacuum chamber 1, the substrate 12 is imposed on the cathode electrode 6 by an elevator. The inside of a vacuum chamber 1 is evacuated to a high vacuum by a vacuum evacuation system and thereafter, the anode electrode 7 is lowered. A gas for electric discharge is introduced through a piping 10 into the vacuum chamber 1 and the electrode pipe is maintained under a prescribed pressure. The high-frequency power is supplied to the cathode electrode 6 by the high-frequency power source 11 to generate plasma 13 between the electrodes and to apply the same to the substrate 12, by which the sputter etching treatment is executed. |
