| 摘要 |
PURPOSE:To improve quantum efficiency, by forming metal layers on one main surface of a semiconductor substrate, and providing a semiconductor layer having the same conductivity type as that of the substrate. CONSTITUTION:On one main surface of a p-type Si substrate 6, an n-type guard ring part 8 and an n-type embedded layer 14 for a vertical CCD register are formed. Thereafter, a transfer gate 11 and a driving gate 13 for the vertical CCD register are formed. Then, an n<+> region 12 is formed. An oxide film 10 is formed on the surface. The oxide film 10 at a specified region is removed. Platinum is evaporated. A platinum silicide layer 7 is formed by heat treatment. Then, a p-type Si layer 15 is formed. An Al reflecting film 9 is further formed. A protecting film (not shown in the drawing) is formed on the entire surface. Then, the metal layers form two Schottky barrier diodes between the substrate 6 and the Si layer 15. Therefore, the quantum efficiency is improved. |
