| 摘要 |
PURPOSE:To form a diode having many chances of surge absorption, by forming the diode in a circular shape, thereby reducing the area of the diode, and forming many flow paths of the surges. CONSTITUTION:A GaAs substrate 2 is covered with a silicon oxide film by a CVD method. A hole is provided so as to correspond to an N-type diffused region 3. Si<+> is implanted, and the circular N-type diffused region 3 is formed. Then, first and second electrodes 4 and 5, which are Schottky-connected to the central part and the peripheral part of the circular N-type diffused region 3, are formed. Thus a Schottky barrier diode is formed. As a protecting diode 1 for a gate electrode 6 of a GaAs MESFET, a Schottky junction part is formed.
|
