| 摘要 |
PURPOSE:To form an element isolation region of submicrons in width easily by a method wherein the sidewalls of grooves are implanted with the first conductivity type impurity ions, and then, after forming insulating films, the second conductivity type single crystal silicon films are epitaxially grown selectively in grooves only. CONSTITUTION:Patterns of insulating films A2 are formed on regions to form an n-channel MOS transistor on a p type silicon substrate 1 while grooves are formed in the substrate 1 using the patterns as masks. The sidewalls of grooves are implanted with boron ion to form p<+> layers thereon. After forming the other insulating films B4 in thickness of submicron on the overall surface of grooves, the insulating films B4 on the groove bottom is etched to leave the insulating films B4 of submicrons in thickness only on the sidewalls of grooves. n type single crystal silicon films 5 are epitaxially grown selectively only on the grooves at the level flush with the surface of silicon substrate 1. Finally, the surface insulating films A2 outside the grooves are removed.
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