FORMATION OF NEGATIVE TYPE RESIST PATTERN

摘要

PURPOSE:To obtain a resist pattern of submicron order by developing an exposed resist layer by a liquid developer contg. chlorinated alkane or chlorinated alkene. CONSTITUTION:The resist layer 13 is formed on, for example, an Si substrate 11 as a subsurface by coating a naphthoquinone diazide sulfonate (LMR) of novolak on said substrate. The layer 13 is then selectively exposed by UV rays or ionization radiations through a prescribed mask. The layer 13 is thereafter developed by the liquid developer contg. the chlorinated alkane or chlorinated alkene to form the resist pattern 13a. The desired resist pattern is thereby obtd. even from the LMR which is exposed by the light of a long wavelength region such as 350-450nm; in addition, the desired resist pattern is obtd. even when the LMR is exposed by far UV rays or electron rays.