| 摘要 |
PURPOSE:To form low resistance layers having the same configuration as each region on gate, source and drain regions in a self-alignment manner, by forming a high-melting.point metal silicide film so as to cover a diffused layer or a semiconductor, and performing thermal oxidization of said film. CONSTITUTION:On the surface of a p-type semiconductor substrate 1, a channel region 3, a gate electrode 4, an n<+> source region 6 and an n<+> drain region 7 are formed. Thereafter, a high-melting-point metal silicide film 8 is deposited on the entire surface. Then, the high-melting-point metal silicide film 8 undergoes thermal oxidation. Thus an SiO2 film 9 is formed on the film 8. At this time, the Si constituting the substrate 1 is diffused in the high-melting-point metal silicide film 8. Said silicide film 8 reacts with the Si constituting the gate electrode 4 and the substrate 1. Therefore, low resistance silicide films 8a-8c are formed only on the gate electrode 4, the source region 6 and the drain region 7 by a self-alignment manner. Thus the layers for decreasing the resistances of the gate electrode, the source regions and the drain regions can be formed readily by a small number of processes.
|
