| 摘要 |
PURPOSE:To implement a transistor having a large current capacity, by providing a base area so that a ratio between the base area and the width of a collector region is a specified value or less, and taking out a collector electrode from the upper part of a semiconductor substrate, thereby reducing a collector resistance. CONSTITUTION:A collector region 3 is provided on a substrate 2. A plurality of base regions 4 and emitter regions 5 are formed in the collector region 3. A plurality of unit transistors are formed in this way. A ratio between the base area and the width of the collector region in each transistor described above is set at a specified value or less. As a result, the collector capacitance can be reduced, and the high frequency characteristics are improved. A collector electrode 7 is taken out of the upper surface of the semiconductor substrate 2 like a base electrode or an emitter electrode. In this constitution, a collector resistance can be reduced. Therefore, the transistor having a large current capacity can be obtained.
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