发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To improve a transfer margin of a gate in a high bias magnetic field, by varying partially with of a conductor pattern in the gate. CONSTITUTION:Pattern width of a conductor pattern 12 is varied partially, that is to say, so as to be thinned toward a points S from a point R. When the conductor pattern 12 is conducted electrically, a magnetic field gradient along the conductor pattern 12 is generated by a change of width of the conductor between the points R, S. As a result, a bubble which has come to the point R is extended by a magnetic field running along the conductor pattern 12, and also, drawn into the point S by the magnetic field gradient, and attracted by a 'Permalloy(R)' pattern 13, when a driving magnetic field has become 90 deg.. In this way, since the bubble can be attracted in the transfer direction by a current, a transfer margin of the gate in a high bias magnetic field can be improved.
申请公布号 JPS62298081(A) 申请公布日期 1987.12.25
申请号 JP19860139225 申请日期 1986.06.17
申请人 FUJITSU LTD 发明人 FURUKAWA KUNIAKI;YONENO KAZUNARI
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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