| 摘要 |
PURPOSE:To improve reliability of wiring correction, by arranging the same conducting layer as an upper layer, on the spare wiring of a lower layer in the vicinity of a crossing part between a spare wiring of the upper layer and that of the lower layer. CONSTITUTION:Correcting a connection between logic gates is performed in the manner in which a wafer is put in an atmosphere of Mo(CO)6 gas, and a correction wiring 11 is formed applying an Mo film deposited on a reaction part by laser irradiation. The wiring 11 is formed so as to connect the upper surface of a spare wiring 6A exposed from a connecting hole 10 and the logic gates. At a crossing part between the spare wiring 5A of a lower layer and the wiring 6A, the correction wiring 11 is formed so as to connect the upper surface of the wiring 6A exposed from the connecting hole 10 and that of a conducting layer 6B exposed from the connecting hole 10. Thereby, the logic gates are inter-connected through the spare wirings 5A and 6A and the connecting wiring 11. Then the connecting hole can be made shallow, so that releability of correction is improved.
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