| 摘要 |
PURPOSE:To obtain a contact structure having shallow junction depth by a method wherein a metal layer is formed on an Si substrate, and after the metal layer has been brought into a silicified state, a high temperature heat treatment is performed in an active gas atmosphere. CONSTITUTION:After a high melting point metal Ti layer has been formed on an Si substrate 11, a TiSi 13 is formed by performing a treatment in an inert gas atmosphere or in a vacuum atmosphere at the temperature of silicification. Then, an impurity element 14 is ion-implanted into the TiSi. Subsequently, a heat treatment is performed in a nitrogen gas atmosphere at the temperature of 900 deg.C which is higher than the temperature of silicification. As a result, the TiSi 13 is converted into a stabilized TiSi2 15, and at the same time, a nitride layer TiN 16 is formed on the surface, and a high density impurity diffusion layer 17 is formed on the surface of the substrate 11. Then, after TiSi2 which was heretofore in use has been formed, a diffusion layer 17 can be formed thinner than the layer formed by performing a nitriding treatment and an impurity diffusing method.
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