发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To prevent a bubble transfer margin from being deteriorated in a crossing part of a conductor pattern and a 'Permalloy(R)' pattern, by providing a hole on a part of the permalloy pattern which is superposed on the conductor pattern. CONSTITUTION:A hole 12 is provided by leaving a bubble propagation area (width W), on a part which crosses an edge part of a conductor pattern 10 in the advance direction of a bubble, against a 'Permalloy(R)' pattern 11 which crosses the conductor pattern 10. By this hole 12, a repulsive magnetic pole which is generated in a step difference of the 'Permalloy(R)' pattern 10 in a crossing part of the conductor pattern 10 and the 'Permalloy(R)' pattern 11 can be weakened. That is to say, by providing the hole 12, an influence by the repulsive magnetic pole in the step difference part of the 'Permalloy(R)' pattern is weakened, therefore, deterioration of a bubble transfer margin can be prevented.
申请公布号 JPS62298080(A) 申请公布日期 1987.12.25
申请号 JP19860139223 申请日期 1986.06.17
申请人 FUJITSU LTD 发明人 YANASE TAKEYASU
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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