| 摘要 |
PURPOSE:To easily remove a 1st film pattern and to prevent a removing solution from contamination by removing a 2nd film pattern on the way of the formation of the 1st film pattern, and then etching the whole surface of the 1st film to form the 1st film pattern. CONSTITUTION:The 1st film 3 is formed with a prescribed thickness on the main surface of a substrate 2 having a difference in level and then the 2nd film 4 and the 3rd film 5 are formed. The 3rd film pattern 5' is formed on the film 5 by a prescribed method and the pattern 5' is used as a mask to form the 2nd film pattern 4' by etching. At the time of anisotropic etching, the etching is stopped on the way to remove the pattern 4'. Then the film 3 is etched to form the 1st film pattern 3'. Then the pattern 3' is easily removed and the removing solution is prevented from contamination. |
