METHOD FOR PLATING SEMICONDUCTOR WAFER

摘要

PURPOSE:To easily form a high quality metallic plating layer on the surface of a semiconductor wafer by plating by jetting many jets of a plating soln. on the surface of the wafer from one of first and second groups of nozzles and recovering the plating soln. through the other. CONSTITUTION:A manual wheel 44 is rotated to move a pressing body 38 upward, a semiconductor wafer 2 having a formed resist layer is set on a sealing part 24 the wheel 44 is reversely rotated to fix the wafer 2 with the pressing body 38. A plating soln. 7 is fed from a first pipe 19 to a first group of nozzles 29 through the openings 27 of a second groups of lower receiving members 28 and many jets of the plating soln. are jetted on the surface of the wafer 2 to form a layer of the plating soln. The plating soln. 35 jetted from the nozzles 29 flows down into a second group of nozzles 30 and flows along the surfaces 34 of the receiving members 28. The soln. is then discharged from a second pipe 20 and recovered.