| 摘要 |
PURPOSE:To make a siliciding reaction uniform by destroying a naturally formed oxide film on silicon with metallic particles having kinetic energy in the early stage of deposition so that no oxide film remains on the interface between the deposited metal and the silicon. CONSTITUTION:In the early stage of deposition, a metal is deposited on a semiconductor substrate with metallic particles having >=1keV energy. Since the single crystal silicon or polycrystalline silicon of the semiconductor substrate is exposed at one or more positions, a naturally formed oxide film on the surface of the silicon is destroyed so that no oxide film remains on the interface between the deposited metal and the silicon. The oxide film causes ununiform siliciding reaction. The resulting deposited layer is then reacted with the silicon which is in contact with the layer to form metal silicide.
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