| 摘要 |
PURPOSE:To prevent a thin film from getting cloudy even at an increased rate of film formation by stopping the formation of a thin film once during film formation and by carrying out plasma etching to improve the surface smoothness of the film. CONSTITUTION:In the 1st stage, a substrate 2 is fitted to a substrate holder 10 acting as the cathode in a vacuum vessel 1. In the 2nd stage, the vessel 1 is evacuated and a film forming substance in a crucible 120 is evaporated, hitted and deposited on the surface 20 of the substrate 2 to form a thin film. During this film formation, the formation is stopped once and voltage from a high frequency power source is impressed to an etching gas under about 1X10<-1>Torr pressure to carry out plasma etching. Generated plasma particles scrape the uneven surface of the thin film by selective collision against the projections to improve the surface smoothness of the film and to prevent the surface of the film from getting cloudy. Activated gaseous Ar is used as the etching gas and one or more among In2O3, SnO2, ITO (In-Sn oxide), ZnO, Au, Ag, Cu, Pb, Pt and Al are preferably used as the film forming substance.
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