| 摘要 |
PURPOSE:To obtain a titled plate material which contains oxygen at an extremely low ratio and has small specific resistance by radiating a beam at every one face of the top and bottom faces of an intermetallic compd. sintered plate material. CONSTITUTION:The intermetallic compd. ingot such as MoSi2 is prepd. and is mechanically ground. The sintered plate material is produced by compacting such powder under heating. The electron beam is radiated to said plate material at every one face of the top and bottom faces thereof to melt the surface partially down to the prescribed depth from the surface thereof. Such beam is continuously and evenly moved along the surface of the plate material to execute said partial melting over the entire part of the surface, by which the oxygen contained in the plate material is removed. The specific resistance of the plate material obtd. in such a manner is considerably decreased. Such plate material is, therefore, adequate for use as a target material to form wirings, etc., of semiconductor devices by a sputtering method.
|
