| 摘要 |
PURPOSE:The surface of the base plate is covered with a masking material in the area where diamond will be formed and with an amorphous material in the rest areas to form a diamond thin film in an arbitrary shape in the desired part. CONSTITUTION:The surface of the Si base plate is covered with a masking material in the area in which diamond will be formed, while the rest areas are covered with an amorphous material 17. amorphous Si or amorphous C is used as an amorphous material. Then, the masking material is removed and vapor-phase synthesis is effected to form a diamond thin film only in the masked area 16.
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