| 摘要 |
PURPOSE:To prevent cracking of the covering insulating film by interposing a heat-resistant resin film so as to keep the insulating film out of contact with a metal barrier film to be provided between the electrode on a semiconductor substrate surface and a metal bump in the uppermost portion, or forming a gap between the metal barrier film and the insulating film. CONSTITUTION:On a resist film pattern 24 including an opening portion 25, a metal barrier film 26 is deposited by means of vapor deposition, which consists of two layers, a Ti film and a Pd film. Then, a second resist film is applied thereon, exposed and developed to provide a second resist film pattern 27 having a window portion somewhat wider than the opening portion 25 in the position of the opening portion, and with the resist film pattern 27 as a mask a gold bump 28 is deposited in the window portion 25. By removing the second resist film pattern 27, etching away the exposed metal barrier film 26, and removing the first resist film pattern 24, gold bump 28 is formed which has a gap formed on an Al electrode 22. With this, the gold bump 28 and a PSG film 23 can be formed so that they and not in contact with each other, thereby reducing the crack of the PSG film. |
