| 摘要 |
PURPOSE:To decrease the energy gap of an active layer in a region in a laser, to remove light absorption at an end surface section and to enable laser oscillation having long life by selectively increasing an impurity in a layer separated from the active layer only by one layer and partially doping the impurity to the active layer during crystal growth. CONSTITUTION:An N GaAs layer 2 is grown on a P-type GaAs substrate 1 through liquid phase epitaxial growth, a region within 30mum from sections as resonator end-surfaces is coated with an Si3N4 film 9, Zn is implanted through ion implantation, a groove 8 is formed through etching, and the nose of the groove is intruded into the substrate 1. A P-GaAlAs layer 3, a GaAlAs layer 4, an N-GaAlAs layer 5 and an N-GaAs layer 6 are grown in succession through liquid growth again. Zn implanted to the layer 2 enters the layers 3, 4 by a diffusion at that time. An AuGeNi electrode 11 is evaporated and alloyed on the layer 6 side and an AuZn electrode 10 on the substrate side.
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