| 摘要 |
PURPOSE:To enable oscillation by different wavelengths by changing an active layer material for a semiconductor laser. CONSTITUTION:N-type GaAs 2 is grown onto a P-type GaAs substrate 1, to which a mesa is formed, through an LPE method in the same manner as a normal BTRS type semiconductor laser, and a ridge is shaped through chemical etching. An active layer 4, an oscillation wavelength of which corresponds 850nm, is manufactured through the LPE method, a laser on one side is removed by etching through a photolithographic technique, and the current blocking layer 2 is left. An active layer 4, an oscillation wavelength of which corresponds to 750nm, is manufactured through the LPE method. A section A is removed by chemical etching through the photolithographic technique, and a section B is gotten rid of through RIE, thus isolating elements. |
