发明名称 |
AN ELECTRODE CONNECTION STRUCTURE IN A SEMICONDUCTOR DEVICE |
摘要 |
<p>A compact connection structure between two electrodes made of two types of metals, i.e., metals which respectively make Schottky and ohmic contact with a semiconductor, is provided by using a high melting point metal or silicide thereof which makes Schottky contact with the semiconductor as one electrode metal. The two types of electrodes can be brought into direct contact with each other, enabling elimination of through hole connections between them and therefore increased semiconductor device density.</p> |
申请公布号 |
EP0078679(B1) |
申请公布日期 |
1987.12.23 |
申请号 |
EP19820305765 |
申请日期 |
1982.10.29 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAKAYAMA, YOSHIRO;SUZUKI, HIDETAKE |
分类号 |
H01L21/28;H01L21/338;H01L23/485;H01L27/095;H01L29/417;H01L29/45;H01L29/47;H01L29/80;H01L29/812;(IPC1-7):H01L29/40;H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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