| 摘要 |
PURPOSE:To satisfy the requirement of high output-low noise in both recording and reproducing by forming the front surface in low reflectivity in a laser for recording and shaping the front surface in high reflectivity in a laser for reproducing. CONSTITUTION:Two-time liquid phase epitaxial growth is conducted onto a P-GaAs substrate 1, and multilayer structure is manufactured, and resonator end-surfaces are etched by using a sulfuric acid group etchant. Al2O3 9 having film thickness corresponding to a quarter wavelength and Si 10 having the same quarter-wavelength film thickness are applied through suputtering as end-surface coating films, and Al2O3 9 and Si 10 except sections as the resonator end-surfaces are removed through etching. Only Si is gotten rid of through etching so that the front surface of a laser for recording and the front surface of a photodetector are brought to low reflectivity at that time. An uppermost layer 11 is taken away for shaping an electrode, and an AuGeNi electrode 8 is evaporated, lifted off and allioyed. AuGeNi 8 is etched for electrically isolating elements and a groove is etched, and AuZn 7 is evaporated on the substrate side and used as on electrode.
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