| 摘要 |
PURPOSE:To enable the large-scale integration by forming a JCCD cell inside rectangular area. CONSTITUTION:JCCD is constituted by a P-type semiconductor layer 11, an N-type semiconductor layer 12 provided on the P-type semiconductor layer 11, a P-type semiconductor region 13 formed inside the N-type semiconductor layer 12, P-type semiconductor regions 141-143 formed inside the N-type semi conductor layer 12, a P-type semiconductor region 15 formed inside the N-type semiconductor layer 12 so that it surrounds the P-type semiconductor regions 141-143 and is in low-resistance contact with the P-type semiconductor region 13, and an N<+>type semiconductor region 16 formed inside the N-type semiconduc tor layer 12, and has a charge transfer function attained by using PN junctions formed by the P-type semiconductor regions 141-143 and the N-type semiconduc tor layer 12. The role of separating adjacent picture elements electrically is fulfilled by a depletion layer region which is brought about by a reverse bias voltage applied to PN junctions formed by the P-type semiconductor region 15 and the P-type semiconductor layer 11 and the N-type semiconductor layer 12, and by selecting the impurity concentration of each region and layer appropri ately, the size W' can be reduced to 4mum substantially.
|
