| 摘要 |
<p>PURPOSE:To form an excellent cleavage plane extremely easily with superior reproducibility by forming an edge flaw at the position of cleavage of the periph eral section of a semiconductor substrate, bonding the semiconductor substrate with a sheet having excellent stretching properties and stretching the sheet. CONSTITUTION:A substrate 1 is fixed onto a stage precisely moved by a stepping motor, etc., and the intervals of edge flaws 6 by a diamond cutter can be conformed to a target value set approximately without errors. The substrate 1 is stuck to a vinyl chloride group sheet 2 by pressure sensitive adhesives 3, the upper section of the substrate 1 is pressed down by a polyester group sheet 4, tensile force is applied mechanically in the direction of the arrow, and the tensile direction is directed in the direction rectangular to the direction of cleavage. When the semiconductor substrate 1 is struck slowly, conformed to the edge flaws 6 by a vertically movable hammer 5 for striking under the state, the substrate 1 is cloven accurately at the positions of the edge flaws 6.</p> |
