| 摘要 |
<p>PURPOSE:To prevent occurrence of unnecessary contact between electrodes, by using a transparent picture element electrode as a source electrode after extending the electrode to the top of a semiconductor layer and further forming an insulating layer at the top of the source electrode. CONSTITUTION:At the electrode forming locations on a semiconductor layer 33 impurity-doped amorphous Si films 34 and 35 are formed to prescribed thicknesses. Then a transparent picture element electrode 36 is formed by sputtering. At the time of formation, part of the electrode 36 is also formed on the upper surface of the Si film 35 and used as the source electrode of a thin-film transistor TFT 50. Moreover, an Si-nitride film 37 is formed on the upper surfaces of the source electrode part and electrode 36 as an insulating film. When such constitution is used, occurrence of unnecessary contact can be prevented between the electrodes even if some of data lines are overlapped on the transparent picture element electrode due to a faulty pattern when the data lines are formed.</p> |
