发明名称 CLEANING METHOD FOR SEMICONDUCTOR MANUFACTURE APPARATUS
摘要 PURPOSE:To maintain an atmosphere in a reaction chamber constant by detecting the removal of a contaminant in the chamber which forms the components of a dissociation reaction product by the attenuation of an emission spectrum of specific dissociation reaction product in a plasma generated in the chamber. CONSTITUTION:Oxygen gas is introduced from an oxygen gas inlet 2 into a reaction chamber 1 held in high vacuum state, one 4 of a pair of opposed electrodes 3, 4 is grounded to use the grounded chamber 1 as an anode. A high frequency power is applied to the other electrode 3 to activate oxygen gas by a glow discharge to generate a plasma, and reactive product adhered to the inner wall of the chamber is reacted with the oxygen to be dissociated. The emission spectrum of the generated gas in the chamber 1 is detected by a carbon monoxide interference filter 5, the detected spectrum is converted by a photodiode 6 to an electric signal, the signal is further amplified by an amplifier 7, and recorded by a recorder 8. Thus, the atmosphere in the chamber can be maintained constant.
申请公布号 JPS62296520(A) 申请公布日期 1987.12.23
申请号 JP19860140835 申请日期 1986.06.17
申请人 MATSUSHITA ELECTRONICS CORP 发明人 KOSHIO ATSUSHI
分类号 H01L21/205;H01L21/302;H01L21/3065 主分类号 H01L21/205
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