| 摘要 |
PURPOSE:To confine beams sufficiently to an active layer, and to inject even carriers enough by constituting a clad layer of two layers including a layer adjacent to the active layer and a layer, which does not adjoin to the active layer having a band gap smaller than the layer adjacent to the active layer. CONSTITUTION:An N-type GaAs buffer layer 3, an N-type AlzGa1-zAs carrier supply layer 4, an N-type AlyGa1-yAs clad layer 5, an AlxGa1-xAs active layer 6, a P-type AlyGa1-yAs clad layer 7, a P-type AlzGa1-zAs carrier supply layer 8 and an N-type GaAs block layer 9 are grown on an N-type GaAs substrate 2 in succession by using an MOCVD method. Striped structure is shaped to the N-type GaAs block layer 9 through chemical etching, a P-type GaAs cap layer 10 is grown through the MOCVD method, and lastly an N side electrode 1 and a P side electrode 11 are formed. Accordingly, the band gap of the clad layer 5 can be increased, and the active layer can also be supplied sufficiently with carriers.
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