发明名称 CHARGE TRANSFER DEVICE
摘要 PURPOSE:To obtain a sufficient transfer efficiency even with the titled device of small size and high density by constituting a charge transfer channel part by the repetition of unit patterns whose width is spread slowly and narrowered rapidly in a direction of charge transfer. CONSTITUTION:The charge transfer channel part 1, separated by a separation spread region 2, consists of the repetition of unit patterns whose width is spread slowly and narrowered rapidly in a direction of the charge transfer. Gate electrodes 3, 4, 5, 6 form a transfer potential for transfer to the channel part 1 and the electrodes 4, 6 constitute the 1st layer gate electrode. Even with the device formed in small size and high density, no complicated manufacture process is required and a sufficient transfer efficiency is obtained.
申请公布号 JPS62296613(A) 申请公布日期 1987.12.23
申请号 JP19860140814 申请日期 1986.06.17
申请人 MATSUSHITA ELECTRONICS CORP 发明人 KOZONO TOSHIYUKI;KURODA TAKAO
分类号 H01L29/762;H01L21/339;H01L27/14;H01L27/148;H01L29/76;H03H11/26;H03K5/135;H04N5/335;H04N5/341;H04N5/372 主分类号 H01L29/762
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