| 摘要 |
PURPOSE:To improve optical conversion efficiency by inserting amorphous layers among each unit cell and forming junctions among the unit cells in n- amorphous-p junctions. CONSTITUTION:An amorphous layer 6 is inserted between respective p-i-n unit cell 4 and 5, and a junction between the unit cells 4, 5 is shaped in an n1- amorphous-P2 junction. It is preferable that the amorphous layer inserted between each p-i-n unit cell consists of at least one of Si, Ge, C and N, and it is desirable that current-voltage characteristics in the n1-amorphous-p2 junction are linear and an inclination thereof is steep. Accordingly, since all of the layers inserted among respective p-i-n unit cells have high internal defect levels and interface defect levels on the junction surfaces of n1 layers and p2 layers joining with the inserted layers are elevated, resistance among the n1-p2 junctions is lowered and carriers are recombined smoothly, thus acquiring a tandem-structure solar battery having a high optical conversion efficiency. |
