| 摘要 |
PURPOSE:To improve reliability and heat-dissipation characteristics by forming a first conduction type current stopping layer shaped with the exception of the upper section of a mesa and consisting of a compound semiconductor having the number of constituents smaller than a clad layer. CONSTITUTION:A semiconductor substrate 1 with a mesa is formed through photolithography, and an n-type (Al0.5Ga0.5)0.5In0.5P clad layer 2, a Ga0.5In0.5P active layer 3, a p-type (Al0.5Ga0.5)0.5In0.5P clad layer 4 and p-type GaAs coating layer 5 are shaped in succession by using an MOVPE method. An n-type GaAs layer 6 and a p-type GaAs layer 7 are laminated successively through a liquid growth method. The n-type GaAs layer 6 is controlled so as not to be laminated to the upper section of the mesa at that time. Lastly, each p and n electrode 8, 9 is formed. Consequently, the active layer and the clad layer are bent, an optical guide section controlling a transverse mode is shaped to the upper section of the mesa, the GaAs layer on the side surface and base of the mesa functions as a current stopping layer, and currents are injected only to the optical guide section. Since the side surface of the mesa consists of GaAs having high thermal conductivity, heat generated in the active layer is dissipated efficiently to a heat sink.
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