发明名称 Method and device for the wet-chemical processing of substrates using thin-film technology
摘要 In the method according to the invention, a chemical liquid selected for the particular processing operation is fed past the stationary substrate (13) in a turbulent flow. For this purpose, the liquid is fed tangentially at high velocity (va) into a sealed chamber (1) and flows out of the latter in a direction perpendicular to it, thereby producing a vortex in the flow. A device for carrying out this method has a vortex chamber (1) which can be sealed on all sides and has an interior space formed by a wall (3) and two oppositely situated end faces (2, 4), which optionally accommodate the substrate (13). In addition, an inlet channel (5) aligned tangentially to the wall (3) and an outlet channel (6) aligned perpendicular thereto in one of the end faces (2) are provided. Inlet channel (5) and outlet channel (6) are linked together in a closed liquid circuit (7 to 12). <IMAGE>
申请公布号 DE3620676(A1) 申请公布日期 1987.12.23
申请号 DE19863620676 申请日期 1986.06.20
申请人 SIEMENS AG 发明人 PICHLER,ALFRED
分类号 C23F1/02;(IPC1-7):H01L49/02;B05C5/00;G03D13/00;H05K3/00 主分类号 C23F1/02
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