| 摘要 |
PURPOSE:To enable a solid-state image sensing device wherein the linearity of the output signal charge is excellent, by causing an electric field pushing away charges to the direction of the group of charge transfer elements to exist within the charge transfer portion or at the connecting portion between the charge transfer portion and the group of charge transfer elements. CONSTITUTION:The channel width defined by P-type implantation layers 8, 9 in the transfer portion under a transfer gate 4 is different in the width W3 adjacent to a charge storage portion 3 and in the width W4 adjacent to a charge transfer element gate 12, and the channel width becomes wider toward the direction of the charge transfer elements. Also in the gate 12, the channel width is different in the channel width W5 adjacent to the transfer gate 4 and in the channel width W6 adjacent to the charge transfer element group, and the channel width also widens toward the charge transfer elements. With this, an electric field pushing away charges to the direction of the group of charge transfer elements, so there is no portion existing in which charges are collected. |
