| 摘要 |
PURPOSE:To avert the effect of pollution while preventing the crystallizability of interface from deteriorating by a method wherein a melt containing a volatile material is liquid-epitaxially grown subject to a condition wherein the position thereof in a growing port before growing process including the melting process is made changeable from that during the growing process. CONSTITUTION:An ordinary growing melt 5 is contained in a growing vessel 6 while another melt 11 containing volatile material is contained in a separately isolated growth vessel 10 to be melted at high temperature. Next, the melt 11 is cooled down to be dropped into another growth vessel 10' passing through a throughhole 9 by sliding a movable bottom plate 8 immediately before growing process so that respective growing melts may be grown in adjoining state. The melt 11 containing volatile material is isolated upward immediately until growing process to prevent the leading-in channel from being subjected to the maximum pollution. Furthermore, the volatile melt 11 is dropped to be grown in an adjoining growing vessels so that the length in the lateral direction, i.e., the space between limited uniform heating length may be effectively used during a multilayer growth process.
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