| 摘要 |
PURPOSE:To realize a semiconductor element equipped with a flattened multilayer interconnection by a method wherein an Si substrate is held on a rotating platform, the rotating platform is heated and caused to rotate, and a plating liquid is dropped on the Si substrate. CONSTITUTION:A through-hole 6 is provided in an interlayer insulating film 5 on an Si substrate, an activation layer 8 is formed on the bottom of the through-hole 6, and then the Si substrate is held on a rotating platform 10. The rotating platform 10 is heated to approximately 90 deg.C and caused to rotate several rounds per second. A nickel-based plating liquid 13 is allowed to drop from a nozzle 12 on the Si substrate at a rate of approximately 100cc per minute. The plating liquid 13 goes into the through-hole 16, where it temporarily stays and is warmed by the heat supplied by the Si substrate. With the growth of a plate being greatly enhanced at a temperature of 50 deg.C or higher, plating steadily proceeds within the through-hole 6. The stay of the plating liquid 13 in the through-hole 6 is shortened, however, with the through-hole 6 growing shallower as the plating process advances. The growth of the plate is sharply decelerated when it has filled 80-90 percent of the throughhole 6.
|
