| 摘要 |
PURPOSE:To reduce the junction depth of the source, drain region of P-type MOS by etching the surface of a single crystal semiconductor substrate with an insulating film formed on the semiconductor substrate as a mask to form a recess, and growing a single crystal semiconductor layer including an impurity in the recess. CONSTITUTION:After a gate oxide film 23 is formed by a MOS process, with the film 23 as a mask a silicon substrate 21 is dry etched, and a silicon molecu lar beam epitaxy method (MBE) growth is performed while applying an electro static field to the substrate in a boron atmosphere. Since the silicon formed in a groove 22 is accelerated by the field to be epitaxially grown while reacting with the boron, it contains a large quantity of the boron of P-type silicon. Further, the junction depth of the P-type silicon is determined by the groove 22. Thus, MOS transistor having a shallow junction depth is obtained.
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