发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To constitute a circuit capable of switching large currents at high speed simply by organizing the circuit of an input signal conversion circuit, a waveform shaping circuit and a current drive circuit. CONSTITUTION:When a signal at a TTL level is transmitted over an input terminal VIN, the signal is level-shifted by Schottky diodes D1-D3 for an input signal conversion circuit, and enters an MESFET Tr4 for a waveform shaping circuit as a BFL signal. Since MESFETs Tr3 and Tr4 for the waveform shaping circuit construct an inverter circuit, a signal where a high level and a low level are inverted to a signal transmitted over the gate for the MESFET Tr4 enters a gate for an MESFET Tr5. The signal transmitted over the gate for the MESFET Tr5 is level-shifted by Schottky diodes D4-D6, and brought to a voltage level capable of switching an MESFET Tr7 for a current drive circuit. The switching times of ON-OFF of an MESFET Tr8 are all brought to approxi mately 1nS by such an input signal conversion circuit.
申请公布号 JPS62296572(A) 申请公布日期 1987.12.23
申请号 JP19860140813 申请日期 1986.06.17
申请人 MATSUSHITA ELECTRONICS CORP 发明人 ASADA HIROAKI;OTSUKI TATSUO
分类号 H03F3/347;H01S5/042 主分类号 H03F3/347
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