| 摘要 |
PURPOSE:To expand a safe operation region of an element by making a groove extending through a source region and a channel region to a semiconductor base to be a drain region, and by providing in this groove a source electrode which forms a Schottky junction with the semiconductor base. CONSTITUTION:A groove extending to an n-type base layer 3 through an n<+> source region 6 and a P<+> base layer 5 is made in the almost central portion of the P<+> base layer 5, and a source electrode 11 reaches the inside of this groove. The central portion of the P<+> base layer 5 is removed, and in place of it, the metal source electrode 11 extends to the n-type base layer 3 so that it forms a Schottky junction 13. By this structure, the base resistance Rs of a parasitic transistor Q2 is reduced, while the Schottky junction 13 is equivalent to a new addition of a collector C2 in relation to the other parasitic transistor Q1. |
