| 摘要 |
PURPOSE:To obtain a high luminance and high efficiency blue light emitting element by making laminated II-VI compound semiconductor films with ZnSxSe1-x(0<=x<=1) and ZnSx'Se1-x' (0<=x'<=1, x'>x). CONSTITUTION:In a light emitting element which has a distorted superlattice structure obtained by laminating different lattice constant two sorts of II-VI compound semiconductor thin films, the laminated II-VI compound semiconductor films are made of ZnSxSe1-x(0<=x<=1) and ZnSx'Se1-x'(0<=x'<=1, x'>x). An ohmic contact 6 against an n<->-type region wherein an aluminum doped ZnSe layer (ZnSe:Al)3 50 Angstrom thick and an undoped ZnS layer 4 50 Angstrom thick are repeatedly laminated 50 periods and a p<->-type region wherein an arsenic doped ZnSe layer (ZnSe:As) 5 50 Angstrom thick and the undoped ZnS layer 4 50 Angstrom thick are repeatedly laminated 50 periods is formed on a GaAs substrate 1. |
