| 摘要 |
PURPOSE:To completely inhibit the generation of hillock from the upper surfaces and sidewalls of lower Al wirings by coating the whole surfaces of the lower Al wirings with high-melting point metal films. CONSTITUTION:An insulating film 3 is interposed between an Si substrate 1 and lower Al wirings 2, the whole surfaces of these lower Al wirings 2, that is, the upper surfaces and the side surfaces, are each coated with an upper high-melting point metal film 6 and side part high-melting point metal films 7 and 7, are embedded in an interlayer insulating film 5, the upper surface of this interlayer insulating film 5 is flattened and an upper Al wiring 4 is formed on here. By coating the whole surfaces of the lower Al wirings 2 with the high-melting point metal films 6, 7 and 7 in such a way, the generation of hillock at the time of high-temperature heat treatment can be completely prevented.
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