| 摘要 |
PURPOSE:To remove an interference with etching of a contact hole and the like in a subsequent process, by laying a polycrystalline silicon film beforehand under a boron phosphorus glass layer. CONSTITUTION:A silicon oxide film 6 is formed in such a degree that a resistance value of a source-drain element is not increased and that a polycrystalline silicon gate edge is not raised. Next, polycrystalline silicon 7 is made to grow, by a reduced-pressure chemical vapor deposition method or the like, to have a thickness a little smaller than a half of the thickness of the oxide film whereby the polycrystalline silicon is oxidized, during a time required for implementing a flow processing of a boron phosphorus glass layer by water vapor. Thereafter the boron phosphorus glass layer 8 is formed by deposition. When heat treatment is applied in an atmosphere of water vapor and at a high temperature of 800 deg.C or above, subsequently, the boron phosphorus glass layer 8 of the surface shows fluidity, the polycrystalline silicon turns entirely to be an oxide film, and simultaneously the surface becomes smooth.
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