| 摘要 |
PURPOSE:To obtain a semiconductor device having high water vapor proof reliability, a high electric characteristic and high heatproof reliability, and moreover having small internal stress, and having extremely high reliability by a method wherein the device is sealed with a specified epoxy resin composite. CONSTITUTION:A semiconductor element is sealed using an epoxy resin composite containing novolak type epoxy resin A, novolak type phenol resin B, a filler C and an organosilicon polymer D, and moreover containing at least one side of the components of a bisphenol A type or a bisphenol F type compound E to be expressed by the expression (1) and a bisphenol A type or a bisphenol F type compound F to be expressed by the expression (2). At the expressions (1), (2), X indicates a p-phenylene radical, R1 is CH3, CF3, CCl3, CBr3, CI3 or H, (n) is an integer of 1-10, and R2 is CH3, CF3, CCl3, CBr3, CI3 or H. The component E and the component F have action to dissolve fragility according to the increase in quantity of the filler of sealing resin, and load thereof is so set as to make the sum total (E+F) of both the components to become to be 1-50% in relation to the sum total of (the component A+the component B).
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