| 摘要 |
PURPOSE:To concentrate an applied current at a projection efficiently by interrupting a current flow forming a reverse bias junction internally by setting a current constriction layer grown selectively in a region except the projection in a different electric conduction type from that of a substrate or the first clad layer. CONSTITUTION:A stripe like projection of definite height and width is formed along a specific crystal axis on the surface of a semiconductor substrate 1 by a photoetching technique, a semiconductor layer 2 which has different conductivity from that of the semiconductor substrate is provided except the region of the stripe like projection for a current constriction layer and covering these, the first clad layer 3, an active layer 4 and the second clad layer 5 are formed in sequence by epitaxial growth. The semiconductor layer 2 for the current constriction layer is set to have as different conductivity type from that of the substrate 1 or the first clad layer 3 and a reverse bias junction is formed internally for interrupting a current flow.
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