| 摘要 |
PURPOSE:To prevent a junction capacity from increasing by ion implanting a reverse conductivity type impurity with a first gate electrode as a mask to form a deep ion implanted layer in a self-alignment. CONSTITUTION:A gate electrode 4 is formed of a first gate electrode 41, and second gate electrodes 42 formed at both sides of the electrode 41, a deep ion implanted layer 10 is formed by self-aligning with the electrode 41, and the electrodes 42 are separated by self-aligning the layer 10 with source, drain regions 2, 3. Accordingly, the layer 10 is formed in the depth of the degree of the depth of source and drain junction at the center, and formed in the same width as the electrode 41. Thus, a high impurity density P-N junction is not formed, and the increase in the junction capacity can be largely reduced as compared with a conventional MOS transistor.
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